| 摘要 |
<p>PURPOSE: To provide a structure effective in improving and uniformizing electron emitting characteristics of a field emission type electron emitting element, and its manufacturing method. CONSTITUTION: A comb-shaped or wedge-shaped emitter 32 is worked from a single crystal silicon thin film by using an SOI board composed of a single crystal silicon thin film, a silicon oxide layer 34 and a silicon board 31, and the silicon oxide layer is removed, and the exposed silicon board is formed as an anode 33. Voltage is impressed between the emitter and the anode, and an electron is emitted from the emitter. Since a distance between the emitter and the anode is determined by a thickness of the silicon oxide layer, uniformity and controllability are improved. When a digging-down part is arranged in an anode part, an electric field is concentracted in the upper end corner, 3nd electron emitting voltage is further uniformized. The single crystal silicon thin film opposed to the emitter can be used as an anode.</p> |
