| 摘要 |
PURPOSE: To form contacts reducing a leak current when impurity elements come into contact with a semiconductor surface by a method wherein thin films are accumulated on a substrate surface containing a surface to which an impurity adding region is exposed and conductive films are accumulated on the thin films to heat the semiconductor surface to diffuse the impurity elements into the substrate. CONSTITUTION: A fild oxide film 2 is formed on a silicon substrate 1 and a gate oxide film 4 is formed on a surface of an active region in the opening and polysilicon films are accumulated on the gate oxide film 4 and this polysilicon film is patterned to form a gate electrode 3G. A word wire 3W extending from this gate electrode 3G is formed, and this word wire 3W and gate electrode 3G are coated with an interlayer insulation film 5 and a contact hole 8 is opened so that a part of surface of a source region 3S of this insulation film 5 is exposed. Thin layers 10 and conductive films 11 are accumulated on the entire surface of a substrate containing a surface exposed by this contact hole 8 and heat-treated, and P atoms in the thin layers 10 are diffused in the substrate 1 and accumulated electrodests 11a. |
