发明名称 HEAT SINK FOR SEMICONDUCTOR
摘要 PURPOSE: To obtain the same characteristics as those of diamond, cubic system boron nitride, etc., by forming a heat sink of unidirectional carbon - carbon fiber compound material which is provided with thermal conductivity of more than specific value in the thickness direction and which has a coefficient of thermal expansion in a fixed range in the extending direction of a joint surface with a semiconductor device. CONSTITUTION: A heat sink consists of the first supporting par 1 to which a semiconductor device 3 is joined and the second supporting part 2, and more than 450W/m.K of thermal conductivity in the thickness direction is provided. And, the supporting parts 1 and 2 are formed of unidirectional carbon --carbon fiber compound material, with a coefficient of thermal expansion of a value 4-10×10<-6> / deg.C, and, are worked by carbon abrasive cutting in the carbon fiber direction. The supporting part 1 has a shape with front and rear slopes, and, the supporting part 1 is, after the periphery is plated with Ni, plated with Au. The supporting part 1 and the semiconductor device 3 are jointed together using general & &Au-Sn material, etc.
申请公布号 JPH08111481(A) 申请公布日期 1996.04.30
申请号 JP19940246386 申请日期 1994.10.12
申请人 TOKYO TUNGSTEN CO LTD;TONEN CORP 发明人 ICHIDA AKIRA;DOI YOSHIHIKO;TSUSHIMA EIKI
分类号 H01L23/373;(IPC1-7):H01L23/373 主分类号 H01L23/373
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