发明名称 |
Vertical-cavity surface-emitting semiconductor laser |
摘要 |
A vertical-cavity surface-emitting semiconductor laser includes: a p-type bottom mirror having an upper face; a p-type spacer layer covering over the entire upper face of the p-type bottom mirror; an active region including an active layer having a bottom face smaller than the upper face of the p-type bottom mirror, the active region being formed on the p-type spacer layer; an n-type spacer layer formed on the active region; and an n-type top mirror formed on the n-type spacer layer, wherein a sum d of optical path lengths of the p-type spacer layer, the active region and the n-type spacer layer in a perpendicular direction satisfies a relationship expressed by d=(1+n). lambda /2 (n: natural number) with respect to a wavelength lambda of light oscillated from the active region.
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申请公布号 |
US5513202(A) |
申请公布日期 |
1996.04.30 |
申请号 |
US19950393209 |
申请日期 |
1995.02.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOBAYASHI, YASUHIRO;CHINO, TOYOJI;MATSUDA, KENICHI |
分类号 |
H01S5/183;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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