| 发明名称 |
Method of fabricating semiconductor device |
| 摘要 |
A method of fabricating a semiconductor device forms a resist pattern for a gate electrode or the like on a semiconductor device in such a manner that only a fine resist pattern is formed on a resist member by an electron beam lithography and other resist patterns are formed on the same resist member by an optical lithography.
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| 申请公布号 |
US5512500(A) |
申请公布日期 |
1996.04.30 |
| 申请号 |
US19950404626 |
申请日期 |
1995.03.14 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OYAMATSU, HISATO |
| 分类号 |
G03F7/20;H01L21/027;H01L21/28;H01L21/336;H01L29/78;(IPC1-7):H01L21/823;H01L21/441 |
主分类号 |
G03F7/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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