发明名称 |
Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications |
摘要 |
This is a vertical field-effect resonant tunneling transistor device comprising: a semi-conducting substrate 46; a drain region 48 above the semi-conducting substrate; a multiple-barrier multi-well resonant tunneling diode 52, 54, 56, 58, 60 above the drain layer; a two dimensional electron gas heterostructure 64 above the multiple-barrier multi-well resonant tunneling diode; a source region 72 extending through the two dimensional electron gas and above the multiple-barrier multi-well resonant tunneling diode; ohmic contacts 70 on the source region, wherein the source region provides an ohmic connection to the two dimensional electron gas; and gate[s] 68, 74 besides the source region.
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申请公布号 |
US5512764(A) |
申请公布日期 |
1996.04.30 |
申请号 |
US19950368251 |
申请日期 |
1995.01.03 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SEABAUGH, ALAN C.;MIKKELSON, CHAD H.;FRAZIER, GARY |
分类号 |
G11C11/56;H01L29/76;(IPC1-7):H01L29/06;H01L31/032 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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