发明名称 |
Pseudomorphic substrates |
摘要 |
High quality epitaxial layers can be grown on a multi-layer substrate which has a crystalline pseudomorphic layer with an exposed surface used for the epitaxial growth. The pseudomorphic layer of the substrate has a thickness at or below the pseudomorphic limit so it will be deformed as stress forces are developed during epitaxial growth of heteroepitaxial structures. A plastically deformable layer is bonded to the pseudomorphic layer, This plastically deformable layer is made of material that plastically flows at epitaxial growth temperatures.
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申请公布号 |
US5512375(A) |
申请公布日期 |
1996.04.30 |
申请号 |
US19930138454 |
申请日期 |
1993.10.14 |
申请人 |
INTEVAC, INC. |
发明人 |
GREEN, ROGER T.;DAVIS, GARY A.;AEBI, VERLE W. |
分类号 |
C30B25/02;C30B25/18;(IPC1-7):B32B17/06;C30B29/40 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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