发明名称 |
Circuitry and method for programming and erasing a non-volatile semiconductor memory |
摘要 |
Circuitry for programming a non-volatile semiconductor memory is described. The circuitry includes a circuit for enabling the non-volatile semiconductor memory to program a bit of the non-volatile semiconductor memory. The enabling circuit causes the bit to be programmed according to a pattern bit. The circuitry also includes a second enabling circuit, which enables the non-volatile semiconductor memory to verify the programming of the bit. Circuitry for erasing a non-volatile semiconductor memory is disclosed. A method for programming a nonvolatile semiconductor memory is also described.
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申请公布号 |
US5513333(A) |
申请公布日期 |
1996.04.30 |
申请号 |
US19930100508 |
申请日期 |
1993.09.15 |
申请人 |
INTEL CORPORATION |
发明人 |
KYNETT, VIRGIL N.;FANDRICH, MICKEY L. |
分类号 |
G11C17/00;G06F12/00;G11C16/02;G11C16/10;G11C16/34;(IPC1-7):G11C16/06 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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