| 摘要 |
The semiconductor component comprises a bipolar transistor, having an emitter, base and collector. The base is in series with a resistor (RB) and capacitor (CB), in parallel. The semiconductor component may comprise numbers of bipolar transistors mounted in parallel on a substrate, the transistor bases are connected to a base bus by assemblies of resistors and capacitors. The emitters may be connected to an emitter bus and the collectors connected together by a collector bridge. The device may be on an insulating substrate doped with Gallium Arsenide. The component may be effective at frequencies of around 1 Gigahertz. Alternatively, emitter, collector and base may be on a bed, on the substrate, the resistor in the bed and the capacitor on the substrate.
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