METHOD FOR MANUFACTURING A MASK ROM USING POLYSILICON ISLAND

摘要

forming an isolation layer(14) and gate oxide layer(11) on a semiconductor substrate(18) to define an active region(19), and forming a gate electrode(10) on the gate oxide layer and a first interlevel insulating layer(17) on the substrate; selectively etching the first interlevel insulating layer(17) to expose the gate electrode(10); forming a contact hole for the purpose of programming of ROM data, a word line(15) in the contact hole, and a second interlevel insulating layer(17') on the word line(15), selectively etching the first and second interlevel insulating layers(17,17') to form a contact hole; and forming a bit line(16) to contact with the active region through the contact hole.