发明名称 METHOD OF MANUFACTURING A THIN SILICON-OXIDE LAYER
摘要 <p>A description is given of a method of providing an ultra-thin (&lt; 1 nm) silicon-oxide layer on a substrate surface, for example, of a metal. A film of a solution of a polyorganosiloxane is applied to said substrate surface. After drying, said polyorganosiloxane is completely converted to said silicon-oxide layer by means of an UV-ozone treatment. Such an ultra-thin silicon-oxide layer sufficiently protects a metal surface against corrosion. In addition, said silicon-oxide layer can be silanized with the customary silane coupling agents to improve the bond with polymers. The method can very suitably be used, for example, to treat metal leadframes for ICs and to provide a bonding layer for indium tin oxide on polyacrylate for a passive plate of LC displays.</p>
申请公布号 WO1996012050(A1) 申请公布日期 1996.04.25
申请号 IB1995000855 申请日期 1995.10.10
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