| 摘要 |
FIELD: semiconductor technology. SUBSTANCE: process relates to semiconductor technology and can be used in manufacture of single or multielement photoreceiving devices. It consists in depositon on semiinsulating GaAs substrate of sequence of layers: conductive n+GaAs layer, multilayer periodic GaAs/AlGaAs structure and second n+GaAs layer followed by etching of upper conductive n+GaAs layer and of multilayer heterostructure in aqueous solution of hydrogen peroxide. Tunnel-thin stop-layer of AlAs 2-5 nm thick is deposited between conductive n+GaAs layer nearest to substrate and multilayer periodic structure. Etching is conducted at 20-22 C in solution carrying in addition organic acid. In the capacity of organic acid there is used tartaric acid with following proportion of components, wt.-%: tartaric acid, 35-45; hydrogen peroxide, 5-10; water, the balance, or lactic acid with following proportion of components, wt.-%: lactic acid, 25-35; hydrogen peroxide, 5-10; water, the balance. EFFECT: increased accuracy of etching while manufacturing photoreceiving elements, enhanced output of articles, reduced cost of photoreceiving elements. |
