发明名称 |
Verfahren zur Herstellung von Isolierschichten auf einem Halbleitersubstrat |
摘要 |
Comprises spinning a film of spin-on-glass (SOG) over a semiconductor substrate, precuring the film of SOG at an elevated temperature sufficient to remove the bulk of solvent and curing the film of SOG in a plasma in a plasma reactor of a type exhibiting a self-biased RF discharge adjacent to the SOG for a period of time sufficient to exclude the bulk of SiOH, organic volatiles and H2O from the layer. |
申请公布号 |
DE4013449(C2) |
申请公布日期 |
1996.04.18 |
申请号 |
DE19904013449 |
申请日期 |
1990.04.27 |
申请人 |
MITEL CORP., KANATA, ONTARIO, CA |
发明人 |
OUELLET, LUC M., QUEBEC, CA |
分类号 |
H01L21/316;H01L21/768;H01L23/29;(IPC1-7):H01L23/28 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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