Interstitielle Dotierung in III-V Halbleitermaterialien, um die Bildung von DX-Zentren zu vermeiden oder zu beseitigen,申请号DE19896025944-传众专利搜索

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发明名称	Interstitielle Dotierung in III-V Halbleitermaterialien, um die Bildung von DX-Zentren zu vermeiden oder zu beseitigen
摘要
申请公布号	DE68925944(D1)	申请公布日期	1996.04.18
申请号	DE19896025944	申请日期	1989.11.22
申请人	XEROX CORP., ROCHESTER, N.Y., US	发明人	CHADI, JAMES D., WOODSIDE CA 94062, US
分类号	H01L29/812;H01L21/205;H01L21/265;H01L21/322;H01L21/338;H01L29/205;H01L29/207;H01L29/778;(IPC1-7):H01L29/207	主分类号	H01L29/812
代理机构		代理人
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