发明名称 Belichtungsmaske für ein Halbleiterplättchen und Belichtungsverfahren.
摘要 For exposing a wafer with radiation, a radiation exposure mask (10) is provided with at least two radiaiton exposure windows (A...D) each including mask pattern (1) of a small pattern area obtained by dividing a pattern area constituting an integrating circuit chip (11) to a plurality of small areas. A semiconductor wafer is exposed with radiation while the radiation exposure mask (10) is intermittently moved by a distance of the size of the small pattern area.
申请公布号 DE68924048(T2) 申请公布日期 1996.04.18
申请号 DE1989624048T 申请日期 1989.12.12
申请人 HITACHI, LTD., TOKIO/TOKYO, JP 发明人 KIMURA, TAKESHI, HIGASHIMURAYAMA-SHI, JP;KUNIYOSHI, SHINJI, SUGINAMI-KU TOKYO, JP;KISHIMOTO, AKIHIKO, TACHIKAWA-SHI, JP;SOGA, TAKASHI, HACHIOJI-SHI, JP
分类号 H01L21/30;G03F7/20;H01L21/027 主分类号 H01L21/30
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