发明名称 |
METHOD FOR PRODUCING HIGH EFFICIENCY LIGHT-EMITTING DIODES AND RESULTING DIODE STRUCTURES |
摘要 |
<p>A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also dislcosed.</p> |
申请公布号 |
WO9611504(A1) |
申请公布日期 |
1996.04.18 |
申请号 |
WO1995US12622 |
申请日期 |
1995.10.02 |
申请人 |
CREE RESEARCH, INC.;NEGLEY, GERALD, H. |
发明人 |
NEGLEY, GERALD, H. |
分类号 |
H01L21/302;B23K26/16;B23K26/40;H01L21/04;H01L21/301;H01L33/00;H01L33/32;H01L33/34;(IPC1-7):H01L33/00;H01L21/268 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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