发明名称 METHOD FOR PRODUCING HIGH EFFICIENCY LIGHT-EMITTING DIODES AND RESULTING DIODE STRUCTURES
摘要 <p>A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also dislcosed.</p>
申请公布号 WO9611504(A1) 申请公布日期 1996.04.18
申请号 WO1995US12622 申请日期 1995.10.02
申请人 CREE RESEARCH, INC.;NEGLEY, GERALD, H. 发明人 NEGLEY, GERALD, H.
分类号 H01L21/302;B23K26/16;B23K26/40;H01L21/04;H01L21/301;H01L33/00;H01L33/32;H01L33/34;(IPC1-7):H01L33/00;H01L21/268 主分类号 H01L21/302
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