Semiconductor component mfr. method for e.g. field effect transistor

摘要

The method initially involves the preparation of a semi insulation substrate (1) with an active layer (2). After the deposition of an insulating film (3) on the active layer of a substrate, two desired first apertures (3a,b) are formed in the first film. The apertures are filled by the deposition of the second insulating film (4) such as at to smooth the surface of the first insulating film. Then a section (3-2) of the first film is removed between the first apertures to form a second aperture. Through the latter the active is etched layer down to a preset depth. The second insulating film sections (4-1,4-2) on the active layer are removed to form a third aperture. The active layer is etched through the third aperture to form a two-shape depression.