Plasma etch process.

摘要

Process comprises: generating radicals in a plasma generator upstream of the etch chamber from a gas mixt. of O2 and/or water vapour and an F-contg. etchant gas; and contacting the resulting radicals with the substrate in the etch chamber. The content of O2 and/or water vapour in the gas is pref. 0.1-20 vol.% on F-contg. gas.