发明名称 |
Supported polycrystalline diamond compact |
摘要 |
<p>Metal carbide supported polycrystalline diamond (PCD) compacts having improved shear strength and impact resistance properties, and a method for making the same under high temperature/high pressure (HT/HP) processing conditions are described. A sintered polycrystalline cubic boron nitride (PCBN) compact interlayer is provided to be bonded at a first interface to a sintered PCD compact layer, and at a second interface to a cemented metal carbide support layer comprising particles of a metal carbide in a binder metal. The supported compact is characterized as having a substantially uniform sweep through of the binder metal from the cemented metal carbide support layer, which sweep through bonds the sintered PCD compact layer to the sintered PCBN interlayer, and the sintered PCBN interlayer to the cemented metal carbide support layer. <IMAGE></p> |
申请公布号 |
EP0706981(A2) |
申请公布日期 |
1996.04.17 |
申请号 |
EP19950307251 |
申请日期 |
1995.10.12 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
CERUTTI, DAVID BRUCE;MAREK, HENRY SAMUEL |
分类号 |
B32B18/00;B01J3/06;B22F7/06;C04B35/52;C04B35/63;C04B35/645;C04B37/00;C04B37/02;(IPC1-7):C04B37/02 |
主分类号 |
B32B18/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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