GROWING METHOD FOR GA-AS ON THE POROUS SILICON SUBSTRATE

摘要

The method of growing GaAs on a porous silicon substrate includes the steps of forming a porous layer(2) on a silicon substrate(1) containing impurities, and trimethyl gallium and AsH3 gas are alternately sprayed to the porous layer(2) on the silicon substrate(1) using ALE and UHVCVD apparatuses, thereby forming a GaAs thin film(3) which is an epitaxial layer.