发明名称 |
Tantalum compound, process of producing the same, and material for forming tantalum oxide films |
摘要 |
A novel tantalum compound represented by the formula (1): Ta(CH3)3(OR)2, wherein R is an alkyl group having from 2 to 7 carbon atoms. The novel tantalum compound is produced by reacting a haloalkoxytantalum compound represented by the formula (2): TaXn(OR)5-n, wherein X is halogen, R is an alkyl group having from 2 to 7 carbon atoms, and n is an integer of from 0 to 4, with a methylmetal compound; and recovering the tantalum compound represented by the above formula (1) by reduced pressure distillation. The tantalum compound has a high vapor pressure and permits effective formation of a uniform film of tantalum oxide with good properties by a CVD method. Therefore, the tantalum compound is very useful for manufacturing semiconductor devices.
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申请公布号 |
US5508063(A) |
申请公布日期 |
1996.04.16 |
申请号 |
US19940346009 |
申请日期 |
1994.11.29 |
申请人 |
JAPAN ENERGY CORPORATION |
发明人 |
SUZUKI, TOSHIYUKI;MORI, HIDEYUKI;NAKAMURA, KOUICHI |
分类号 |
C07F9/00;C23C16/18;C23C16/40;(IPC1-7):C23C16/00 |
主分类号 |
C07F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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