| 摘要 |
PURPOSE: To provide a method of manufacturing a high-quality SOI substrate of a structure, wherein the insulation properties of the SOI substrate are good and the interface between a silicon film and the SOI substrate has a flat buried oxide film, by a method wherein oxygen ions are implanted in a silicon substrate and a heat treatment is performed on the silicon substrate. CONSTITUTION: In a heat treatment process for the formation of a buried oxide is conducted after oxygen ions are implanted in a silicon substrate, a heat treatment of a partial pressure of oxygen of at least 5×10<-3> Pa or higher in an atmosphere and 100 deg.C or higher, desirably 1330 deg.C or higher to 1410 deg.C or lower, is performed on the substrate, whereby a SOI substrate of high quality can be manufactured. |
