| 摘要 |
A stacked capacitor element for a DRAM cell is formed as follows. After a naturally oxidized film on a surface of a polycrystalline silicon film is removed, the polycrystalline silicon film is subjected to a rapid thermal nitriding treatment using lamp annealing so that a capacitor lower electrode of the capacitor element is formed. A tantalum oxide film is deposited on the polycrystalline silicon film and then densified so that a dielectric film of the stacked capacitor element is formed. A conductive film is formed on the tantalum oxide film and patterned. The conductive film is nittided so that a capacitor upper electrode is formed. The capacitor element thus formed enables the suppression of reduction in the capacitance value of the capacitor element of a DRAM and deterioration of the leakage current characteristics.
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