| 摘要 |
PCT No. PCT/JP93/00849 Sec. 371 Date Apr. 28, 1994 Sec. 102(e) Date Apr. 28, 1994 PCT Filed Jun. 23, 1993 PCT Pub. No. WO94/00882 PCT Pub. Date Jan. 6, 1994.A thin film transistor which has improved electric characteristics such as off current characteristics, and a manufacturing method of a thin film transistor. A thin film transistor has an n- source area and an n- drain area comprising an n- silicon film (low concentration area). The n- silicon film is made by performing a crystallization treatment such as an SPC method on an amorphous silicon. The crystallization treatment is carried out after the implantation of impurities but before a gate electrode is formed and activates the impurities at the same time. Accordingly, the activation of impurities is not restricted by the heat resistance of the materials for the gate electrode. A gate electrode made of metal is formed after the n- source area and n- drain area are formed. The gate electrode, n- source area and n- drain area are not formed by self-alignment.
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