发明名称 MASK FOR X-RAY EXPOSURE AND MASK BLANK FOR X-RAY EXPOSURE
摘要 <p>PURPOSE: To further improve the accuracy of the mask pattern for X-ray exposure by increasing the adhesive strength between an X-ray transmissive supporting film and an X-ray absorptive film with the interposition of a specified first antireflection film. CONSTITUTION: This mask is provided with a silicon frame 5 pierced with a window 7, an X-ray transmissive supporting film 3 supported by the frame 5 and an X-ray absorptive pattern 1 of heavy metal furnished on the supporting film 3. A first antireflection film 2 is provided between the pattern 1 and the supporting film 3 and a second antireflection film 4 on the face of the supporting film 3 in contact with the frame 5. The supporting film 3 and the second antireflection film 4 are formed of a light-element substance and the first antireflection film 2 is formed of the tin oxide film adhesive to the pattern 1 and supporting film 3. Consequently, when the pattern 1 is formed by reactive ion etching, the pattern is not meandered, and the pattern precision is improved.</p>
申请公布号 JPH08101496(A) 申请公布日期 1996.04.16
申请号 JP19940235684 申请日期 1994.09.29
申请人 TOPPAN PRINTING CO LTD 发明人 FUKUHARA NOBUHIKO;MATSUO TADASHI;NOGUCHI FUMINOBU;TANAKA SHOJI
分类号 G03F1/50;G03F1/54;G03F9/00;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/50
代理机构 代理人
主权项
地址
您可能感兴趣的专利