| 摘要 |
<p>PURPOSE: To provide a method of manufacturing a semiconductor device, which makes small the occupation area of a resist check pattern on a semiconductor chip, checks the deformation of the form of lines, checks a resolution limit and checks the linearity characteristics of the lines to decide the go or no-go of a resist pattern in a lithography process, and to provide a photo mask which is used in this lithography process. CONSTITUTION: A resist check pattern for deciding the go or no-go in a lithography process is constituted of a plurality of lines 11, 12, 13, 14, 15, 16, 17, 18 and 19 and spaces 21, 22, 23, 24, 25, 26, 27 and 28 between the lines, the dimensions in the arrangement directions of the lines and the spaces are both increased or decreased continuously in an arithmetic series manner or a geometric series manner and the dimensions of the lines in the direction rectangular to the arrangement direction are increased or decreased with an increase or decrease in the arrangement direction.</p> |
