发明名称 |
Thin film transistor (TFT) and method of manufacturing thereof |
摘要 |
There is provided a TFT having a trench surrounding gate structure that is capable of decreasing the leakage current generated during the Off-State of the TFT by securing enough channel length despite the smallness of the area, increasing the driving current by securing a sufficient cross-sectional area of an inverted channel during the On-State of the TFT, and improving the resolution of the LCD by reducing the space occupied by the TFT in the panel during the manufacturing of the LCD.
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申请公布号 |
US5508531(A) |
申请公布日期 |
1996.04.16 |
申请号 |
US19950392103 |
申请日期 |
1995.02.22 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HA, HYOUNG C. |
分类号 |
H01L29/78;H01L21/336;H01L29/786;(IPC1-7):H01L21/70;H01L45/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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