| 摘要 |
PURPOSE: To obtain a sputtering target material generating a small number of particles and capable of forming a thin film less liable to cause unevenness in the alloying component content with the lapse of time. CONSTITUTION: This sputtering target material has a compsn. consisting of 1-20wt.% one or more kinds of alloying components selected from among Nb, V, Ti, Zr, Ni, Pt and W and the balance Al with inevitable impurities and a recrystallized structure contg. an intermetallic compd. of Al with the alloying components dispersed as particles of <=30μm average particle diameter in the matrix of <=30μm average grain diameter. This target material can suppress the generation of particles during film formation.
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