发明名称 Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate
摘要 There are provided a method of inspecting and evaluating semiconductor substrates, good quality semiconductor substrates, a method of manufacturing good quality semiconductor substrates, and a method of manufacturing semiconductor devices using good quality semiconductor substrates. A semiconductor substrate is processed with aqueous basic solution. In this process, the substrate is dipped in the aqueous solution or exposed to a vapor of the aqueous solution. With this process, the surface of the substrate is selectively etched. The substrate surface after the etching process is radiated with a laser beam to measure a light scattered point density. The quality of the substrate can be judged in accordance with the measured density. A thermal treatment may be carried out before or after processing the substrate with the aqueous basic solution. The thermal treatment considerably changes the fine defect density on the surface of the substrate. In accordance with such a change, the quality of the substrate may be judged. If a substrate judged as having a good quality is used, a semiconductor device having a good quality substrate can be obtained.
申请公布号 US5508800(A) 申请公布日期 1996.04.16
申请号 US19930031924 申请日期 1993.03.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIYASHITA, MORIYA;HIRATSUKA, HACHIRO;KUBOTA, ATSUKO;SAMATA, SHUICHI;NUMANO, MASANORI;FUKUI, HIROYUKI
分类号 H01L21/66;G01N1/28;G01N21/84;G01N21/95;H01L21/306;(IPC1-7):G01N21/88 主分类号 H01L21/66
代理机构 代理人
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