发明名称 |
Elevated-gate field effect transistor structure and fabrication method |
摘要 |
A field effect transistor (10) has an active layer (16) formed in a substrate (12). A gate (20) is disposed on an elevated platform (18) formed from the active layer (16). The elevated platform (18) raises the bottom surface (21) of the gate (20) relative to the top surface (34, 36) of the active region (13) on either side of the gate (20). A fabrication method for the transistor (10) forms the elevated platform (18) by etching the active region surface (44) on both sides of the gate (20) so that the bottom surface (21) of the gate (20) is elevated relative to the top surface (34) of the surrounding active region (13). The gate (20) itself and/or a patterned photoresist layer (116) may be used as a mask for performing this etch.
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申请公布号 |
US5508539(A) |
申请公布日期 |
1996.04.16 |
申请号 |
US19950425733 |
申请日期 |
1995.04.20 |
申请人 |
MOTOROLA, INC. |
发明人 |
GILBERT, JAMES G.;KLINGBEIL, JR., LAWRENCE S.;HALCHIN, DAVID J.;GOLIO, JOHN M. |
分类号 |
H01L21/338;H01L29/08;H01L29/10;H01L29/812;(IPC1-7):H01L29/80;H01L27/02 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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