| 摘要 |
PURPOSE: To provide a stable semiconductor film by introducing mixed gas among reactive gas, gas for dilution, and impurity gas, so that the rate R of the reactive gas to the gas for dilution may be within a specified numerical value range, and forming a semiconductor film on condition that the power density P for making plasma, the flow F of mixed gas, and the rate R may satisfy the specified formula. CONSTITUTION: Mixed gas consisting of monosilane reactive gas, hydrogen gas for dilution, and impurity gas is introduced, at a rate of reactive gas/gas for dilution = 0.025-0.07, into a reactor. It is made plasma by supplying the mixed gas with electric energy of 0.2[W/cm<2> ] or under in power density. A fine crystal structure of semiconductor film is made on condition that the relation among power density P [W/cm<2> ], flow F [sccm], and the reactive gas/gas for dilution = R is expressed by the formula of 2.2×(P-0.02)/ R<2> <=F<=3.2×(P-0.02)/R<2> . From the variation of the sheet resistance value of the n-type impurity semiconductor layer of 100Åin film thickness, it can be seen that a film with low resistance of 100kΩ/square or under is made stably.
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