SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a highly reliable capacitor structure and its manufacturing method. CONSTITUTION: This semiconductor device is provided with a capacitor which is provided with a first electrode 12 (Nb-added SrTiO3 film) which is made of a metal oxide including elements of 5A group of the periodic table, such as Nb formed on a semiconductor substrate 1 and a capacitor insulating film 16 (a Bax Sr1-x TiO3 film) formed on the first electrode 12 and a second electrode 19 (an Nb added SrTiO3 film) formed on this capacitor insulating film 16 and a diffusion preventive layer (a Ti film 8 and an MoNx film 9) formed between the first electrode 12 and the semiconductor substrate 1.