| 摘要 |
PURPOSE: To suppress a surface recombination current from flowing by forming a mesa-isolated photo detecting part from a compd. semiconductor and covering its surface, including a p-n junction round the mesa, with an S compd. or Se compd., thereby terminating dangling bonds in the p- and n-semiconductors with atoms of S or Se. CONSTITUTION: On a flat electrode 10 an n-GaAs substrate 11, n-GaAs layer 12, p-GaAs layer 13 and p-Al0.85 Ga0.15 As window layer 14 are formed in this order and the side face is shaved off, starting from the layer 14 to the layer 14 to form a photo-detecting part A of a mesa-isolated GaAs cell. On the shaved side face (round the mesa) and top face of the layer 14 an AS2 S3 (arsenic trisulfide) terminating film 15 is formed to terminate dangling bonds in the layers 12 and 13 with the atoms of S to suppress a useless surface recombination current from flowing. |
