| 摘要 |
PURPOSE: To make a short-wavelength light emission possible at room temperatures and to contrive the stabilization of the performance characteristics, such as current-voltage characteristic and current-light output characteristic, and the prolongation of the life of the device in the II-VI compound semiconductor light-emitting device. CONSTITUTION: A semiconductor light-emitting device constituted of at least a first conductivity type first clad layer 2, an active layer 3 and a second conductivity type second clad layer 4 are provided on a substrate 1, at least the layer 3 consists of a II-VI compound semiconductor and this layer 3 is doped with either of an N-type dopant and a P-type dopant or both of the N-type and P-type dopants. |
