| 摘要 |
PURPOSE: To provide a light emitting device which emits light at a much higher luminance than a conventional light emitting device. CONSTITUTION: A double-hetero junction structure light emitting device has a first clad layer 11 made of p-type mixed crystal compound semiconductor, a p-type active layer 12 made of p-type mixed crystal compound semiconductor which has a mixed crystal ratio necessary for the light emission having a specific wavelength and a second clad layer 13 which is made of n-type mixed crystal compound semiconductor and is formed on the whole region or on the region except the region near the hetero-junction part with the p-type active layer 12. The double-hetero junction structure is such that the p-type active layer 12 is provided between the first and second clad layers 11 and 13. Therefore, n-type and p-type impurities are added to the second cladding layer 13, the concentration of the p-type impurities is not less than 1×10<17> cm<-3> and a p-n junction is formed at the position 0-1μm apart from the hetero-junction of the active layer 12. |
