| 摘要 |
<p>PURPOSE: To provide a thin film transistor panel for liquid crystal display element having high numerical aperture and a capacity line of low resistance. CONSTITUTION: A silicon layer and a metal layer are in order piled on a transparent base plate 10, and the silicon layer is converted to a metallic silicide layer. The metal layer is removed, simultaneously the metallic silicide layer is treated by patterning, and hence a light transmitting capacity line CS made of metallic silicide is formed. Thereafter, a thin film transistor 12, and a picture element electrode 11 connected to the thin film transistor 12 and opposite to the capacity line CS are formed.</p> |
