MANUFACTURE OF SEMICONDUCTOR DEVICE, AND MANUFACTURE OF FILM TRANSISTOR, AND LIQUID CRYSTAL DISPLAY

摘要

PURPOSE: To provide a semiconductor device equipped with a polycrystalline silicon film having excellent characteristics. CONSTITUTION: An amorphous silicon film 2 is made on an insulating substrate (quartz glass) 1. Next, by annealing it at about 600 deg.C, an amorphous silicon film 2 is grown in solid phase so as to form a polycrystalline film 3. Furthermore, this polycrystalline silicon film 3 is heat-treated at about 1000 deg.C. Hereby, the gap between the crystals within the polycrystalline silicon film 3 contracts, and properties improve such that the leakage current decreases, etc.