发明名称 SIMULATION METHOD OF ELECTRIC CHARACTERISTIC OF SEMICONDUCTOR DEVICE AND INPUT DATA FORMING EQUIPMENT FOR THE SIMULATION METHOD
摘要 PURPOSE: To easily input necessary data, enable reusing the data as input data of various simulators, make formation data accurate, and enable the reduction of working time, by designating the formation of an objective part by the selection out of several simplified shape models. CONSTITUTION: When electric characteristics of a semiconductor device are simulated, a process is provided wherein the material quality, electric characteristics, and the shape of an objective part of the semiconductor device are designated. The shape is designed by the selection out by several selected and simplified shape models. For example, the following are inputted by using a shape input module 1; data showing the material quality of wiring to be simulated, data showing the resistance of the wiring, data designating electrode positions of the wiring, data designating the shape of the wiring, and data showing the relation between wirings. The designation of the shape is selected out of a truncated cone (including cylinder), a hexahedron shape, and a spoon cut shape.
申请公布号 JPH0897215(A) 申请公布日期 1996.04.12
申请号 JP19940259545 申请日期 1994.09.29
申请人 SONY CORP 发明人 TATSUMI TAKAAKI
分类号 H01L21/3205;G06F17/50;G06F19/00;G06Q50/00;G06Q50/04;H01L21/768;H01L23/52;H01L23/522 主分类号 H01L21/3205
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