| 摘要 |
PURPOSE: To form quantum wires or quantum dots having an extremely steep quantum potential barrier on a substrate without giving damages to the substrate by a method where n-type semiconductor quantum wires or quantum dots are interposed between potential barriers of a porous semiconductor. CONSTITUTION: Phosphor impurities of high concentration are doped by an FIB ion implantation of a p-type impurity silicon substrate 1 of which the surface is processed, and wires 2 of an n-type region are formed in a p-type region. Next, it is dipped in a hydrofluoric acid solution and optically formed by an Xe lamp irradiation. Then, the p-type region is selectively etched as the anode and turned to a porous silicon layer 3 wide in a band gap. At this time, the n-type wires 2 are not etched to become a quantum wires, and porous silicon layers 3 work as quantum potential barriers. As described above, by a technique not using processes such as transfer, exposure to light, development or the like of patterns, a quantum wire array excellent in controllability of the wire width can be realized. |
