| 摘要 |
PURPOSE: To provide a bipolar transistor of high performance and reliability wherein the withstand voltage between the emitter and the base is improved, and a manufacturing method of the bipolar transistor. CONSTITUTION: In the title bipolar transistor the following are formed; a first impurity diffusion layer 3a formed in a semiconductor substrate 1, a first conducting film 3 connected with a first diffusion layer 3a, an aperture part arranged in the first conducting film 3, a second impurity diffusion layer 11 which is formed on the semiconductor substrate 1 exposed in the aperture part and connected with the first diffusion layer 3a, a third impurity diffusion layer 12 formed so as to include the second diffusion layer 11, a side wall 7a formed on the aperture side wall, and a fourth impurity diffusion layer 9 formed in the third diffusion layer 12 of the aperture part surrounded by the side walls 7a.
|
