THIN FILM SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To raise movement velocity of an i-type a-Si film and to miniaturize a liquid crystal panel by forming an i-type silicon film containing fine crystal phase with conduction rate of a specific value in a part within a specific distance from an insulation film. CONSTITUTION: A light shield metal film 709 is formed on a glass substrate 701 and a foundation insulation film 710 is formed all over the glass substrate 701. An SiO2 film which becomes the foundation insulation film 710 is formed at most 50nm thick. An intrinsic silicon region 702 and two n<+> -type silicons 703 shaped to hold the intrinsic silicon region 702 therebetween are formed on the foundation insulation film 710. An i-type silicon film containing fine crystal of conduction rate of 5×10<-10> S/cm or more is formed in the intrinsic silicon region 702. A gate insulation film 704 wherein a through-hole is made is formed above the intrinsic silicon region 702. Furthermore, a gate electrode metal film 705, a source/drain metal film 707 and a passivation film 708 are formed.