| 摘要 |
<p>PURPOSE: To form a wafer support member using an aluminium nitride material sintered body and at the same time, to contrive to provide a high-resistance layer having a volume resistivity higher than that of the aluminium nitride material sintered body, which is a parent material, at the contact sites of the wafer support member with a wafer. CONSTITUTION: As the contact sites of a wafer support member with a wafer 20 consist of a high-resistance layer 13, an electrostatic suction of the wafer 20 due to a Johnson-Rahbeck force is prevented from being generated and after a process ends, the wafer 20 can be easily demounted from the wafer support member. As a result, the throughput of the wafer 20 is improved and a mixing of impurities can be also prevented.</p> |
