| 摘要 |
PURPOSE: To prevent the contamination of a silicon oxide film with movable ions such as sodium ion, by providing a polyimide film directly on a silicon oxide film covering a surface junction in a planar type semiconductor device. CONSTITUTION: A planar semiconductor device comprises an N-type conductivity type first semiconductor layer 1, P-type conductivity type second semiconductor layer 2, a P-type conductivity type third semiconductor layer 3 to form a guard ring, wherein a silicon oxide film 5, and electrodes 7, 8 for protecting higher concentration fourth semiconductor layer 4 and surface junctions 6a, 6b, 6c than the impurity concentration of the layer 1 are formed. A passivation of polyimide material is formed instead of nitride film, PSG. That is, after the electrodes 7, 8 are formed of the film 9, it is formed by a photographic unit. Thus, the passivation is obtained by the photographic unit by using the low-cost unit. The polyimide film can effectively prevent the contamination with movable ion such as sodium ion, etc. |
