| 摘要 |
<p>PURPOSE: To provide a new BGA type chip carrier having higher radiation property and connection reliability than a conventional BGA type semiconductor device using a base material made mainly of resin. CONSTITUTION: In a chip carrier using, as a base, a metal plate in which plural holes are formed substantially in a matrix form, a through-hole 2 in a metal plate 1 is tapered in advance, and three-layer films composed of copper foils 3a, 3b, polyimide films 4a, 4b and polyimide adhesives 5a, 5b are bonded together from both sides of the through-hole. Hole parts 22, 36 for via-holes are formed by laser beam processing, and copper layers 23, 38 are formed by electroless plating and electroplating, thus producing via-holes 24, 37. Then, wiring patterns 25, 39 and an external connection electrode 26 are formed by sequential patterning. Finally, a semiconductor chip 18 is mounted and a solder pad 19 is formed.</p> |
