| 摘要 |
PURPOSE: To flatten the surface of a substrate by a method wherein raw gas added with a hydrocarbon halide is used, a III-V compound semiconductor layer is grown on the surface of the substrate by an organometallic vapor growth method and a buried layer is deposited in recessed parts formed in the substrate surface having a step. CONSTITUTION: An N-type InGaAsP guide layer 12, an InGaAsP active layer 13, a P-type InP clad layer 14 and a P-type InGaAsP contact layer 15 are deposited on an N-type InP substrate 11 having (100) face by an MOVPE method and a striped SiO2 pattern 19 is formed on the surface of the layer 15. An etching is performed to form a mesa-shaped structure 20, a high-resistance InP buried layer 16A in its initial stage of growth is formed on the side surfaces of the structure 20 and in the vicinity of the surface of the substrate 11 and a high-resistance InP buried layer 16 grown using raw gas added with monochloromethane is formed on the layer 16A. Accordingly, by adding the monochloromethane to the raw gas at the time of deposition of the layer 16, the comparatively flat surface of the substrate can be obtained.
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