发明名称 MANY-CELL MEMORY
摘要 PURPOSE: To effectively reset a memory by using an auxiliary reset mechanism, which is separated from the memory itself and does not require changes in memory itself and by an additional auxiliary reset control circuit for decreased circuit capacity. CONSTITUTION: A reset link 21 is internally connected to the respective resettable cells of an array 11. Therefore, the single reset control signal effectively causes the reset of all cells of the array. The contents or the state of each reset state circuit (or reset-state memory cell) in the array 11 is used to mask the contents of the words related to a memory array 15 in the controlled state, every time the word is read out. When the reset memory cell is cleared, all the memory words addressed by the mask are outputted as zero, regardless of the bit state of the word related to the memory at that time.
申请公布号 JPH0897299(A) 申请公布日期 1996.04.12
申请号 JP19940225033 申请日期 1994.09.20
申请人 HARRIS CORP 发明人 DEIBUITSUDO ESU RANDETA;UIRIAMU AARU YANGU;CHIYAARUZU DABURIYUU RONGUUEI
分类号 G11C11/41;G11C11/401;H01L21/8244;H01L27/11 主分类号 G11C11/41
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