| 摘要 |
PURPOSE: To obtain a high performance long life semiconductor light emitting device in which the increase of crystal defects and dislocations in a buffer layer which is a semiconductor layer adjacent to a substrate is avoided and the production of the crystal defects and dislocations in a semiconductor layer which contributes to light emission is suppressed. CONSTITUTION: Gallium nitride compound semiconductor layers which include at least an n-type layer 4 and a p-type layer 6 and have a light emitting part are built up on a substrate 1 with buffer layers 2 and 3 therebetween. At least the substrate side layer of the buffer layers is composed of a semiconductor layer through which a current is difficult to flow. |
