发明名称 Substrat zum Herstellen einer Dickschichtschaltung.
摘要 For improvement in heat radiation capability without sacrifice of affinity for a paste, a substrate used for fabrication of a thick film circuit has a multi-level structure having a foundation (1) of an aluminum nitride and a surface film (2) provided on the foundation, and the surface film is formed of an oxygen compound containing silicon atoms.
申请公布号 DE68923980(T2) 申请公布日期 1996.04.11
申请号 DE1989623980 申请日期 1989.02.01
申请人 MITSUBISHI MATERIALS CORP., TOKIO/TOKYO, JP 发明人 KUROMITSU, YOSHIRO C/O MITSUBISHI, 1-CHOME OMIYA-SHI SAITAMA 330, JP;YOSHIDA, HIDEAKI C/O MITSUBISHI, 1-CHOME OMIYA-SHI SAITAMA 330, JP;TANAKA, CHUJI C/O MITSUBISHI, 1-CHOME OMIYA-SHI SAITAMA 330, JP;UCHIDA, HIROTO C/O MITSUBISHI, 1-CHOME OMIYA-SHI SAITAMA 330, JP;MORINAGA, KENJI, NAKAGAWA-CHO CHIKUSHI-GUN FUKUOKA 811-12, JP
分类号 H01L23/15;H05K1/03;H05K1/09;H05K3/38;(IPC1-7):H01L23/15 主分类号 H01L23/15
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