| 摘要 |
<p>A field-effect transistor of the metal-dielectric-semiconductor type is proposed, comprising: a dielectric substrate (1) on the surface of which are provided at least one source (2) and drain (3) regions and associated electrodes (4, 5); between the source and drain regions, at least one semiconductor sub-gate region (6) with a layer of sub-gate dielectric (7) on its surface, the gate electrode (8) being situated on the sub-gate dielectric; at least one of the source (2) or drain (3) regions is a region of metallic conductivity and forms a Schottky barrier.</p> |
