发明名称 |
Epitaktische Siliziumschicht und Verfahren zu deren Abscheidung |
摘要 |
An in-situ doped n-type silicon layer is provided by a low temperature, low pressure chemical vapor deposition process employing a germanium-containing gas in combination with the n-type dopant containing gas to thereby enhance the in-situ incorporation of the n-type dopant into the silicon layer as an electronically active dopant. Also provided are a silicon layer including a P-N junction wherein the layer contains an n-type dopant and germanium, and devices such as transistors incorporating an in-situ n-doped silicon layer. |
申请公布号 |
DE69117582(D1) |
申请公布日期 |
1996.04.11 |
申请号 |
DE1991617582 |
申请日期 |
1991.04.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US |
发明人 |
MEYERSON, BERNARD S., YORKTOWN HEIGHTS, N.Y. 10598, US |
分类号 |
H01L21/205;H01L21/22;H01L21/331;H01L29/73;H01L29/737;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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